nextpower mosfets smaller, faster, cooler
2 nextpower mosfets - visit us at www.nxp.com/mosfets nextponwr-vrirura.rirmosfets nprcftm/ ftponwasolg nxp introduces a range of high performance n-channel, logic-level mosfets in lfpak as a power design engineer, compromise is never far from your mind. do i choose a low r ds(on) device and accept the higher output capacitance? do i demand the lowest gate charge characteristics to reduce switching losses but then fnd that the package options are no longer ideal in my application? the nextpower range of mosfets from nxp provides uniquely balanced characteristics across the six most important parameters essential for your latest high effciency and high reliability designs. more performance, less compromise many competitors focus only on optimising r ds(on) and q g . as q g gets lower then losses due to q oss and q gd become more signifcant. nextpower uses superjunction technology to provide the optimum balance between low r ds(on) , low q oss , low q g(tot) and q gd to give optimum switching performance. nextpower delivers superior soa performance, and low q oss reduces the losses between the output drain & source terminals. nextpower also delivers the lowest r ds(on) with sub 1 m? types at both 25 v and 30 v. lfpak packaging provides rugged power switching on a compact 5 mm x 6 mm footprint compatible with other power-so8 vendors. the unique benefts of lfpak make it the best package choice for demanding applications or where high-reliability is required. it also allows for visual inspection, reducing the need for costly x-ray equipment to detect solder defects as is common with qfn style power-so8 packages. key benefts } high effciency in power switching applications } industrys lowest r ds(on) power-so8 - less than 1 m? at 25 v and 30 v } low q oss for reduced output losses between drain & source } low q gd for reduced switching losses and high frequency switching } 20 v rated gate provides better tolerance to voltage transients than lateral mosfet types } superior safe operating area performance compared to other trench mosfet vendors } optimised for 4.5 v gate drive voltage } optimum switching performance under light & heavy load conditions } lfpak package for compatibility with other vendor power-so8 types } eliminates costly x-ray inspection C lfpak solder joints can be optically inspected key applications } synchronous buck regulators } dc-dc conversion } voltage regulator modules (vrm) } power or-ing
3 nextpower mosfets - visit us at www.nxp.com/mosfets nextpower 25 v & 30 v mosfets in lfpak (power-so8) fpvpcomrfnrn3apoh3v0o5fvrop0lvftfil many suppliers focus on two favourable indicators when defning mosfet performance, but this only tells part of the story. the spider chart below shows the relative performance of nextpower versus the leading mosfet vendors, comparing the six most important mosfet parameters required for high-performance & high reliability switching applications. the outside edge of the graph represents the best-in-class performance, whilst scoring towards the centre of the graph represents a weakness. } low r ds(on) gives low i 2 r losses and superior performance when used in a sync fet or power or-ing application } low q oss gives reduced losses between the drain & source terminals since the energy stored in the output capacitance (c oss ) is wasted whenever the voltage changes across the output terminals } soa performance provides tolerance to overload & fault conditions. the graph shows the maximum allowable current for a 1 ms pulse at v ds =10 v } low miller charge (q gd ) gives reduced switching losses between the mosfets drain & source terminals when the mosfet turns on or turns off } low gate charge (q g ) gives reduced losses in the gate drive circuit since less energy is required to turn the mosfet on & off } superior junction temperature rating, t j(max) , is proof that lfpak is the most rugged power-so8 package available. lfpak is the best choice for demanding environments and where high reliability is required comparison of nextpower technology with key competitor types r ds(on) max @ v gs = 4.5 v t j(max) nxp compettor a compettor b combined q g & q gd fom soa ratng q oss fom
4 nextpower mosfets - visit us at www.nxp.com/mosfets nextpower types C parametric data kf aaalosaaaone mamfr,oat hr,alf af nrxx os sairfamnonffrordmatdnaaf cdhlorfm2aof ahr,ap c-vrom aone malf alhmraftcfhnaa f nrxx os sairfajr, fa4ptocaleehtnlotromalosaahr,aprholc atmrhlo saer, famdeehnaorerhrct mu type voltage (v) r ds(on) typ v gs = 4.5 v (m?) q g (typ) v gs = 4.5 v (nc) q gd (typ) v gs = 4.5 v (nc) c oss (pf) hklfuad7q d7 u37 7x x xv hklfxaxd7q d7 x3d v xx xxdx hklfxadd7q d7 x3v7 vx 3v hklfxad7q d7 d d 3 u hklfxad7q d7 d3d d 3 x hklfdadd7q d7 d3 x 73d x hklfdad7q d7 v37 x 3 7ux hklfvadd7q d7 v3 x d hklfvad7q d7 3d7 xu3x v vu hklfaud7q d7 37 xu3 v37 v7 25 v nextpower types mt1crnftsy7-dyuseyxetydxbtsoxiocpniyep0poniycto3in0nlnycny at0p5tsyc3tynbcp2x2yf 0 iotyftcfttiy0nfyt wd cy0nfyx wcnch c y0nfy x w cy3pl3yd-kybtsvns2 ioty iay0nfy nee y cyyy iayyp dxbtsoxiocpniycto3in0nlnyon2fpiteyc3tyftitaceynvy y0 cts 0y 7-dyuscyw0nfyx lwcnch y iay0nfyx w hyfpc3yc3tyftitaceynvy y sstio37-dyusyw0nfyt wdwnih y iayyysxlltayksuys cpilhy stex0cpilypiy yxipgxt0nyf 0 iotayebtopao cpnip mt1crnftsyxetey iynbcp2ptayf 0 iotynvyc3tyapvvtsticy stepec iotyt0t2ticeypiyc3ty7-dyusycny o3pt5ty y0nftsy y nistepec iotyvnsyt5tsnyot00pys3ty0nfyot00ystepec ioty2t ieyc3 cy mt1crnftsycnbteycnbpo 00nystgxpstyvtftsyot00eyc3 iyon2btcpcnsy at5poteycny o3pt5tyc3tye 2tyt wdwnih c y iay y0nftsyot00yonxicy bsn5patey0nftsyx wcnc h cy0nfyx w cy0nfy nee y iayexbtspnsyd vty nbts cpily st yysxlltaiteep nextpower technology uses p-type pillars to improve the breakdown voltage in the off state, and a heavily doped n-type drift region to achieve exceptionally low on resistance. since fewer cells are required to achieve a given r ds rating, then gate charge (q g ), miller charge (q gd ), output capacitance (c oss ) are all reduced and optimum ruggedness (denoted by the safe operating area characteristics) is achieved. superjunction technology drain p-type pillars n-type drift region n+ gate p-body source
5 nextpower mosfets - visit us at www.nxp.com/mosfets type voltage (v) r ds(on) typ v gs = 4.5 v (m?) q g (typ) v gs = 4.5 v (nc) q gd (typ) v gs = 4.5 v (nc) c oss (pf) hklfxauvuq vu x3x 7u x3 xdxu hklfxadvuq vu x3v7 v xx3 hklfxa7vuq vu x37 vu 3 u hklfdadvuq vu d3v d 7x hklfdavuq vu v3x x 737 7 hklfvadvuq vu v37 x3d 3x vd hklfvavuq vu 3d7 x 3d vu hklfaxvuq vu 37 xx v37 vx hklfa7vuq vu 73x 3 d37 d 30 v nextpower types benchmarking comparing nxp nextpower with nxp trench 6 technology rftnst px8re8ofsx5o xfrc8howr x8vprexenowextxxxr5mtorftvxstofxtospt rmx8oxrd&o2tlrf8xa rftnxx8vpre test conditions } } } } } type voltage (v) r ds(on) typ v gs = 4.5 v (m?) q g (typ) v gs = 4.5 v (nc) q gd (typ) v gs = 4.5 v (nc) c oss (pf) hklfxa7vu vu x3 v 3 xud hklfxa7vuq vu x37 vu 3 u hklfauvu vu v3 x 3v hklfa7vuq vu 73x 3 d37 d 30 v nextpower types =& g $ 3h " ) i j 0 c &4 e$ f 9 ) = k ,l m n < = ) ok c$ f 9 e ) = k ,l m n < = ) okp c$ f 9 e ) = k ,l m n < = ) 8 + ,, c$ f 9 e ) xy w ! u 5 v ! u f ! v 5 f ! tvv y ! xy w ! u 5 x ! u \ ! ] ! \v t ! xy w ! ] ! f 5 f ! u 5 ] ! bg f ! xy w ! v 5 t ! f 5 \ ! u 5 ] v ! u] ] ! 0 5 10 15 20 25 30 nextpower: psmn4r5-30ylc / psmn1r5-30ylc trench 6: psmn4r0-30yl / psmn1r5-30yl efficiency i load (amps)
6 nextpower mosfets - visit us at www.nxp.com/mosfets hpvdrwnpdr nextponwronxqrrr,nrnpdrypvdnxnxpwr benchmarking tests show that nextpower types deliver 1% effciency gains compared to the nearest competitor types: test conditions } input voltage: 12 v } output voltage: 1.2 v } 1 phase } frequency: 500 khz } air fow: 200 lfm 0 5 10 15 20 25 30 psmn4r0-25ylc/psmn1r1-25ylc competitor efficiency i load (amps) 0 1 2 3 4 5 6 7 8 9 10 nxp trench 6 and previous generation from competition nxp nextpower and latest generation from competition nxp soa current (amp) competitor 1 competitor 2 condition: soa drain current (amp) @ v ds =10 v, 10 ms pulse for a 5 m (@ 10 v) in power so8 why choose lfpak? } reduced electrical resistance and inductance } outstanding thermal performance } rugged design, qualifed to aec-q101 (stringent automotive standard) } easy to handle, solder and inspect } power-so8 footprint compatible
7 nextpower mosfets - visit us at www.nxp.com/mosfets tt:o-f2tpwo,mtmw/wsfnvinwviw37/e5 further nextpower types are planned for release in q3-2011. preliminary data is provided in the tables below. these types are recommended for control-fet applications in synchronous-buck regulators. ylb types have an integrated snubber circuit to further reduce spiking levels for critical applications. type voltage (v) r ds(on) typ v gs = 4.5 v (m?) psmn5r0-25ylb 25 6.1 psmn5r0-25ylc 25 6.6 psmn6r0-25ylc 25 7.3 psmn7r3-25ylc 25 8.9 psmn9r0-25ylc 25 10.7 psmn011-25ylc 25 12.7 type voltage (v) r ds(on) typ v gs = 4.5 v (m?) psmn6r0-30ylb 30 6.7 psmn6r0-30ylc 30 7.6 psmn7r0-30ylc 30 8.5 psmn8r6-30ylc 30 10.3 psmn011-30ylc 30 11.7 psmn012-30ylc 30 13.8 mosfet brand name mosfet type n-ch or p-ch mosfet on-resistance r ds(on) - mosfet voltage bv ds package type gate threshold voltage nextpower special features p s m n 1 r 7 - 25 y l c power silicon max n = n-ch r95 = 0.95 m? - 25 = 25 v b = d 2 pak sot404 l = logic-level c = optimised for q g(fom) p = p-ch 1r7 = 1.7 m? - 30 = 30 v d = dpak sot428 s = standard-level b = integrated snubber x = dual n-ch 014 = 14 m? - 40 = 40 v e = i 2 pak sot226 y = dual p-ch 125 = 125 m? - 60 = 60 v k = so8 sot96 z = n-ch + p-ch - 80 = 80 v l = qfn3333 sot873 - 100 = 100 v p = to220 sot78 - 110 = 110 v y = lfpak sot669 & sot1023 - 120 = 120 v x = to220f (fullpack) sot186a part numbering for nxp mosfets types in bold red italic underline represent products in development
? 2011 nxp semiconductors n.v. all rights reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. ooo5ped5ypv date of release: may 2011 document order number: 9397 750 17100 printed in the netherlands
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